2SC3074 2002-07-23 1 toshiba transistor silicon npn epitaxial type (pct process) 2SC3074 high current switching applications low collector saturation voltage: v ce (sat) = 0.4 v (max) (i c = 3 a) high speed switching time: t stg = 1.0 s (typ) complementary to 2sa1244 maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 5 a base current i b 1 a ta = 25c 1.0 collector power dissipation tc = 25c p c 20 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c unit: mm jedec D jeita D toshiba 2-7b1a weight: 0.36 g (typ.) jedec D jeita D toshiba 2-7j1a weight: 0.36 g (typ.)
2SC3074 2002-07-23 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 50 v, i e = 0 D D 1 a emitter cut-off current i ebo v eb = 5 v, i c = 0 D D 1 a collector-emitter breakdown voltage v (br) ceo i c = 10 ma, i b = 0 50 D D v h fe (1) (note) v ce = 1 v, i c = 1 a 70 D 240 dc current gain h fe (2) v ce = 1 v, i c = 3 a 30 D D collector-emitter saturation voltage v ce (sat) i c = 3 a, i b = 0.15 a D 0.2 0.4 v base-emitter saturation voltage v be (sat) i c = 3 a, i b = 0.15 a D 0.9 1.2 v transition frequency f t v ce = 4 v, i c = 1 a D 120 D mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz D 80 D pf turn-on time t on D 0.1 D storage time t stg D 1.0 D switching time fall time t f i b1 = ? i b2 = 0.15 a, duty cycle 1% D 0.1 D s note: h fe (1) classification o: 70 to 140, y: 120 to 240 marking explanation of lot no. month of manufacture: january to december are denoted by letters a to l respectively. year of manufacture: last decimal digit of the year of manufacture 20 s input i b1 i b2 output v cc = 30 v i b1 10 ? i b2 c3074 product no. lot no. h fe classification
2SC3074 2002-07-23 3 v ce ? i c v ce ? i c i c ? v ce v ce ? i c collector-emitter voltage v ce (v) collector current i c (a) collector-emitter voltage v ce (v) collector current i c (a) collector-emitter voltage v ce (v) collector current i c (a) collector-emitter voltage v ce (v) collector current i c (a) dc current gain h fe collector current i c (a) collector current i c (a) collector-emitter saturation voltage v ce (sat) (v) 0 0 common emitter tc = 100c 90 10 100 80 70 60 50 40 30 20 0 8 6 4 2 2 4 6 8 12 10 i b = 10 ma 1.2 0 0 common emitter tc = 25c 1.0 0.8 0.6 0.4 0.2 1 2 3 4 5 6 7 150 100 80 500 60 300 40 200 20 i b = 10 ma common emitter tc = 100c 150 100 80 500 60 120 40 200 20 i b = 10 ma 0 1.0 0.8 0.6 0.4 0.2 0 1 2 3 4 5 6 7 common emitter tc = ? 55c 120 160 500 300 40 200 250 i b = 20 ma 1.2 0 1.0 0.8 0.6 0.4 0.2 0 1 2 3 4 5 6 7 h fe ? i c v ce (sat) ? i c 25 tc = 100c common emitter v ce = 1 v ? 55 1000 100 300 500 10 30 50 0.03 0.1 0.3 1 3 10 common emitter i c /i b = 20 25 tc = ? 55c 100 1 0.1 0.3 0.5 0.01 0.03 0.05 0.03 0.1 0.3 1 3 10
2SC3074 2002-07-23 4 p c ? ta v be (sat) ? i c i c ? v be collector current i c (a) base-emitter saturation voltage v be (sat) (v) base-emitter voltage v be (v) collector current i c (a) collector-emitter voltage v ce (v) safe operating area collector current i c (a) ambient temperature ta (c) collector power dissipation p c (w) 0.1 0.03 common emitter i c /i b = 20 25 100 tc = ? 55c 10 0.1 0.3 1 3 10 0.3 0.5 1 3 5 0 0 common emitter v ce = 1 v 5 4 3 2 1 0.4 0.8 1.2 1.6 2.4 2.0 25 ? 55 tc = 100c 28 0 0 (1) tc = ta infinite heat sink (2) ceramic substrate 50 50 0.8 mm (3) no heat sink 20 40 60 80 100 120 160 4 8 12 16 20 (1) (2) (3) 24 140 *: single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. 0.01 0.1 10 i c max (continuous) i c max (pulsed)* v ceo max 1 ms* 10 ms* dc operation tc = 25c 30 100 3 10 0.3 1 1 0.03 0.05 0.1 0.3 0.5 5 3
2SC3074 2002-07-23 5 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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